t ransistor output these devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector , in a surface mountable, small outline, plastic package. they are ideally suited for high density applications, and eliminate the need for through ? the ? board mounting. ? convenient plastic soic?8 surface mountable package style ? standard soic ? 8 footprint, with 2 0.050 ? compatible with dual lead spacing w ave, v apor phase and ir reflow soldering ? high input ? output isolation of 3000 v ac (rms) guaranteed ? ul recognized file #e90700, volume 2 ordering information: ? t o obtain moc2 1 1, 212 and 213 in t ape and reel, add r2 su f fix to device numbers: r2 = 2500 units on 13 2 reel ? t o obtain moc2 1 1, 212 and 213 in quantities of 50 (shipped in sleeves) ? no su f fix marking information: ? moc2 1 1 = 2 1 1 ? moc212 = 212 ? moc213 = 213 applications: ? general purpose switching circuits ? interfacing and coupling systems of di f ferent potentials and impedances ? regulation feedback circuits ? monitor and detection circuits maximum ra tings (t a = 25 c unless otherwise noted) rating symbol v alue unit input led forward current ? continuous i f 60 ma forward current ? peak (pw = 100 m s, 120 pps) i f (pk) 1.0 a reverse v oltage v r 6.0 v led power dissipation @ t a = 25 c derate above 25 c p d 90 0.8 mw mw/ c output transist or collector ? emitter v oltage v ceo 30 v collector ? base v oltage v cbo 70 v emitter ? collector v oltage v eco 7.0 v collector current ? continuous i c 150 ma detector power dissipation @ t a = 25 c derate above 25 c p d 150 1.76 mw mw/ c small outline opt oisola t ors transistor output schema tic 1. led anode 2. led ca thode 3. no connection 4. no connection 5. emitter 6. collect or 7. base 8. no connection 1 2 3 8 6 5 4 7
maximum ra tings ? continued (t a = 25 c unless otherwise noted) rating symbol v alue unit t o t al device input ? output isolation v oltage (1,2) (60 hz, 1.0 sec. duration) v iso 3000 v ac(rms) t otal device power dissipation @ t a = 25 c derate above 25 c p d 250 2.94 mw mw/ c ambient operating t emperature range (3) t a ? 45 to +100 c storage t emperature range (3) t stg ? 45 to +125 c lead soldering t emperature (1/16 2 from case, 10 sec. duration) ? 260 c electrical characteristics (t a = 25 c unless otherwise noted) (4) characteristic symbol min ty p (4) max unit input led forward v oltage (i f = 10 ma) v f ? 1.15 1.5 v reverse leakage current (v r = 6.0 v) i r ? 0.1 100 a capacitance c ? 18 ? pf output transist or collector?emitter dark current (v ce = 10 v , t a = 25 c) i ceo 1 ? 1.0 50 na (v ce = 10 v , t a = 100 c) i ceo 2 ? 1.0 ? m a collector?emitter breakdown v oltage (i c = 100 m a) v (br)ceo 30 90 ? v emitter?collector breakdown v oltage (i e = 100 m a) v (br)eco 7.0 7.8 ? v collector?emitter capacitance (f = 1.0 mhz, v ce = 0) c ce ? 7.0 ? pf coupled output collector current moc21 1 (i f = 10 ma, v ce = 10 v) moc212 moc213 i c (ctr) (5) 2.0 (20) 5.0 (50) 10 (100) 6.5 (65) 9.0 (90) 14 (140) ? ? ? ma (%) collector?emitter saturation v oltage (i c = 2.0 ma, i f = 10 ma) v ce(sat) ? 0.15 0.4 v t urn?on t ime (i c = 2.0 ma, v cc = 10 v , r l = 100 w ) t on ? 7.5 ? m s t urn?of f t ime (i c = 2.0 ma, v cc = 10 v , r l = 100 w ) t of f ? 5.7 ? m s rise t ime (i c = 2.0 ma, v cc = 10 v , r l = 100 w ) t r ? 3.2 ? m s fall t ime (i c = 2.0 ma, v cc = 10 v , r l = 100 w ) t f ? 4.7 ? m s input ? output isolation v oltage (f = 60 hz, t = 1.0 sec.) (1,2) v iso 3000 ? ? v ac(rms) isolation resistance (v i?o = 500 v) (2) r iso 10 11 ? ? w isolation capacitance (v i?o = 0, f = 1.0 mhz) (2) c iso ? 0.2 ? pf 1. input?output isolation v oltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common. 3. refer to quality and reliability section in opto data book for information on test conditions. 4. always design to the specified minimum/maximum electrical limits (where applicable). 5. current t ransfer ratio (ctr) = i c /i f x 100%. mo c 21 1 , moc212, moc213
c i f , led input current (ma) 50 20 10 5 2 1 0.5 0.1 1 10 figure 1. led forward v oltage versus forward current i f , led for w ard current (ma) 10 1 2 0.01 1000 100 1 1.2 1.4 1.6 1.8 figure 2. output current versus input current v f , for w ard vol t age (vol ts) i , output collect or current (normalized) pulse onl y pulse or dc typical characteristics normalized t o : i f = 10 ma t a = ? 4 5 c 25 c 100 c 100 10 1 0.1 0.01 20 t a , ambient tempera ture ( c) 120 100 80 60 40 20 0 ?20 ?40 ?60 0.1 1 10 figure 3. output current versus collector?emitter v oltage v ce , collect or?emitter vol t age (vol ts) 10 9 8 01 2 3 4 5 6 16 7 0 2 4 6 8 10 12 14 18 16 14 12 10 8 6 4 v , vol t age (vol ts) 2 i c , output collect or current (ma) i c , output collect or current (normalized) c, cap acit ance (pf) 1 10 100 0.1 0 2 0 4 0 6 0 8 0 100 t a , ambient tempera ture ( c) i ceo , collect or?emitter dark current (normalized) figure 4. output current versus ambient t emperature figure 5. dark current versus ambient t emperature figure 6. capacitance versus v oltage normalized t o : t a = 25 c i f = 10 ma moc21 1 moc213 normalized t o : v ce = 10 v t a = 25 c v ce = 30 v 10 v c led c ce f = 1 mhz moc212 mo c 21 1 , moc212, moc213
p ackage dimensions style 1: pin 1. anode 2. ca thode 3. nc 4. nc 5. emitter 6. collector 7. base 8. nc dim a min max min max millimeters 0.182 0.202 4.63 5.13 inches b 0.144 0.164 3.66 4.16 c 0.123 0.143 3.13 3.63 d 0.01 1 0.021 0.28 0.53 g 0.050 bsc 1.27 bsc h 0.003 0.008 0.08 0.20 j 0.006 0.010 0.16 0.25 k 0.224 0.244 5.69 6.19 notes: 1. dimensioning and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b k d g 8 pl 0.13 (0.005) m ta m j h c sea ting plane 0.038 (0.0015) 1 85 4 ? a ? ? t ? mo c 21 1 , mo c 21 2 , mo c 213
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation
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